STMicroelectronics – Automotive Discrete Group
Department: R&D Power & Discrete Group – Power Transistor Division
Our experience is linked with designer and reliability aspect:
- Power Bipolar Transistor;
- Power Mosfet ;
- Rad-hard design of Power device for space application ( developping rad-hard tecnologies and products)
- Radiation expert ( Co60, xray, heavy ion, alpha particles) on power devices in any semiconductor material
- Cosmic ray expert for automotive and avionics application
- Gate oxide defect with impact on reliability stress
- Failure mechanism in Reliability stress in particular HTRB and humidity stress